Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

Si-ZnO thin-film transistors were fabricated using atomic layer deposition (ALD) then annealed in oxygen at 400°C for 1 hour and are demonstrated. Hexagonal wurtzite structure ZnO was presented all films, with a primary diffracted peak the (100) direction regardless of annealing treatment. First-principle density functional theory (DFT) calculations supported observed crystalline characteristics. Electrical characteristics improved Si doping, increasing carrier concentration to 3.51 × 10 20 c m − 3 reducing film resistivity id="M2"> 0.28 1 Ω . cm well-matched optical bandgap widening from UV-vis results Tauc plot: Burstein-Moss (BM) effects. After implementing ambient device parameters realize low power/energy consumption an SS value 0.67 V/decade; threshold voltage ( id="M3"> V th ) 0.68 V; field effect mobility id="M4"> μ FE 5.22 cm2/V·s, respectively. The related reduced interface trap densities due passivated vacancies, BM induced percolation conduction increased Thus, incorporating Si-based materials by ALD offers viable candidate superior energy-saving appliances.